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HMC221BE is a MMIC primarily designed for microwave and radio frequency (RF) by ADI

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HMC221BE is a MMIC primarily designed for microwave and radio frequency (RF) by ADI

Price : 10 usd

Payment Terms : T/T

MFR : ADI

Product Number : HMC221BE

Description : RF Switch IC General Purpose SPDT 3 GHz 50Ohm SOT-23-6

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HMC221BE is specifically engineered as a gallium arsenide (GaAs) metal-semiconductor field-effect transistor (MESFET) amplifier, with the following key functional characteristics:

HMC221BE is a MMIC primarily designed for microwave and radio frequency (RF) by ADI


  • High-Frequency Signal Amplification: It operates efficiently across a broad frequency range, typically covering DC (direct current) up to 8 GHz. This enables it to amplify weak RF/microwave signals (e.g., from antennas or sensors) while maintaining signal integrity, making it suitable for both narrowband and wideband signal chains.
  • Low Noise Figure (NF): A critical performance metric for amplifiers, its low NF (typically as low as 1.5 dB at mid-band frequencies) minimizes signal-to-noise ratio (SNR) degradation. This is essential for systems requiring high sensitivity, as it preserves the quality of weak input signals (e.g., in receivers for satellite or radar systems).
  • Stable Gain Performance: It delivers a consistent small-signal gain (usually 10–12 dB across its operating frequency range) with minimal variation, ensuring reliable signal amplification without significant gain droop or distortion. This stability is vital for maintaining system linearity in signal processing.
  • Broadband Impedance Matching: The device is designed with integrated impedance matching networks (optimized for 50 Ω systems), simplifying circuit integration by reducing the need for external matching components. This feature enhances compatibility with standard RF/microwave system architectures and simplifies PCB (printed circuit board) design.
  • High Linear Operation: It exhibits good linearity (characterized by high third-order intercept point, IP3) under typical operating conditions. This reduces intermodulation distortion (IMD) when processing multi-tone or high-power signals, a key requirement for applications like communication transmitters or test equipment.

2. Typical Applications

Leveraging its high-frequency performance, low noise, and stability, the HMC221BE is widely used in the following RF/microwave systems:


  • Communications Systems:
    • Wireless Infrastructure: Employed in the receiver front-ends of cellular base stations (e.g., 4G/LTE, legacy 3G systems) and point-to-point (P2P) microwave links. It amplifies weak incoming signals from user equipment (UE) or remote links while preserving signal quality.
    • Satellite Communications (SatCom): Used in low-noise amplifiers (LNAs) for small-aperture terminal (VSAT) receivers, where low NF is critical to detect weak signals transmitted from satellites.
  • Radar and Electronic Warfare (EW):
    • Short-Range Radar Systems: Integrated into automotive radar (e.g., adaptive cruise control, collision avoidance) or industrial radar (e.g., level sensing) to amplify low-power echo signals.
    • EW Receivers: Utilized in electronic intelligence (ELINT) or electronic support measures (ESM) systems to amplify and process faint RF signals from enemy emitters, leveraging its low noise and broadband capabilities.
  • Test and Measurement Equipment:
    • Incorporated into RF/microwave signal generators, spectrum analyzers, and network analyzers. It serves as a driver amplifier or LNA in test setups to ensure accurate signal generation and precise detection of low-level signals.
  • Aerospace and Defense Electronics:
    • Used in airborne communication systems, avionics radar, and military radio receivers. Its GaAs MESFET technology offers ruggedness and reliability in harsh environments (e.g., extreme temperatures, vibration), meeting aerospace-grade performance requirements.
  • Industrial and Scientific Instruments:
    • Applied in medical imaging equipment (e.g., microwave-based diagnostic tools) and scientific research setups (e.g., particle accelerator RF systems) to amplify and process high-frequency signals with minimal noise interference.

Product Tags:

HMC221BE MMIC RF amplifier

      

Analog Devices ADI microwave IC

      

HMC221BE RF integrated circuit

      
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